elektronische bauelemente KTC3198 npn silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual f e a t u r e s c o l l e c t o r - b a s e v o l t a g e : v ( b r ) c b o = 6 0 v 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 3 m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) symbol parameter value units p cm power dissipation 0.625 w a i cm collector current storage temperature junction temperature 0.15 -55~+150 150 electrical characteristics classification of h fe(1) ? t amb =25 , unless otherwise specified ? parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic = 100 a, i e = 0 6 0v v (br)ceo ic = 5 ma, i b =0 v rank range o y gr bl 70-140 120-240 200-400 350-700 emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 50 v collector cut-off current i cbo v cb = 60v, i e =0 0.1 p a emitter cut-off current collector-emitter breakdown voltage i ebo v eb = 5v, i c =0 0.1 p a h fe ? 1 ? v ce = 6v , i c =2ma h fe ? 2 ? v ce = 6v , i c = 150 ma 70 700 dc current gain i c = 100 ma, i b = 10 ma collector-emitter saturation voltage v cesat v i c = 100 ma, i b = 10 ma 0.25 0.1 100 25 base-emitter saturation voltage v besat 1 v transition frequency f t v ce =10v,i c =1 ma, f=30mhz 80 mhz t stg t j c o c o 2.54 0.1 (1.27 typ.) 13 2 1: emitter 2: base 3: collector 1.25 0.2 4.55 0.2 3. 5 0.2 4.5 0.2 14.3 0.2 0.46 0.1 0.43 +0.08 C0.07 to-92 rohs compliant product a suffix of "-c" specifies halogen & lead-free
elektronische bauelemente KTC3198 npn silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 2 f 3 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 30 dc current gain h fe 1k 300 100 0.3 0.1 collector current i (ma) c h - i 0.3 collector-emitter saturation 3 ce(sat) 0.01 300 100 30 0.1 collector current i (ma) c v - i 10 base current i ( a) 0.3 b 3k 0 base-emitter voltage v (v) be i - v 40 80 120 160 200 240 1234 567 common emitter ta=25 c 6.0 5.0 3.0 2.0 1.0 0.5 i =0.2ma 0 b fe c 1 3 10 30 50 100 300 500 10 ce(sat) c voltage v (v) 0.3 1 3 10 0.03 0.05 0.1 0.5 1 common emitter i /i =10 cb ta=100 c 25 c -25 c ce v =-10v ta=25 c common emitter 1k 500 100 50 30 -10 -3 -1 -0.3 transition frequency f (mhz) e t f - i e emitter current i (ma) -0.1 -30 -100 -300 10 t 3k 300 bbe 0.2 0.4 0.6 0.8 1.0 1.2 1 3 30 100 300 1k common v =6v ce emitter ta= 100 c ta= 25 c ta =-25 c common ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v emitter 0.1 5 3 1 0.5 30 10 3 1 c be(sat) v - i c collector current i (ma) 0.1 0.3 100 300 10 be(sat) base-emitter saturation 0.3 voltage v (v) b c i /i =10 ta=25 c common emitter
elektronische bauelemente KTC3198 npn silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 3 of 3 c p (mw) 0 collector power dissipation 0 ambient temperature ta ( c) pc - ta h parameter - i c collector current i (ma) 0.1 0.3 30 50 0.1 h parameter c 10 3 1 0.3 1 3 10 30 100 300 1k 2k common emitter f=270hz v =12v ta=25 c ce bl gr y o h fe bl bl bl gr gr gr y y y o o o ie h x h x h x k ie h x k h x oe 10 re -4 ce h parameter - v 2k 1k 300 100 30 10 3 1 0.3 h parameter 0.1 10 30 100 300 3 0.5 collector-emitter voltage v (v) ce 1 common emitter i =2ma ta=25 c f=270hz c bl gr y o fe h oe h -4 re 10 bl bl bl gr gr gr y y y o o o 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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